ossila"snewrangeofrobustandreusableplatinumtestchipsaredesignedtosaveyoutimeandmoney.

TheOFETswerepatternedviaphotolithography,meaningverynarrowchannellengthsareacheivable.

Theplatinumissputteredontoatitaniumadhesionlayertoprovidean extremelyrobustcontactandchannelallowingittowithstandcleaningproceduressuchassolventsonication,plasmaetching,and swabbing.Thisallowsthetestchipstobereusedmultipletimesfortestingvariousmaterialssavingasignificantamountoftimeandmoney. 

NOTE:Patterningusingphotolithographyleavesexposededgesofthetitaniumadhesionlayer.Theconsequenceofthisisthatchargeinjectionintothesemiconductinglayercanoccurfromtheadhesionlayerboundaryinsteadoftheplatinum.Thereforethesedevicesarerecommendforsingle-crystalorsingle-flakematerialsthatcansitontopoftheelectrodeandspantheelectrodegap.

Mobilityscreeningismadequickandsimplewithourprefabricatedhighdensitytestchips,bydepositingyoursemiconductordirectlyontothesurfaceyoucancreate upto20OFETsonasinglechip.Inadditionwhenusingour high-densityOFETtestboard youcantestanentirechipinaslittleas3minutesreducingtheoveralltimeofbothfabricationandmeasurement.

 

Productcode	Channelgeometry	Channelwidth	Channellength	Electrodepairs	Quantity	Price
S403A1	Linear	1mm	2-10μmVariable	20	1	£83
S403A2	Linear	1mm	4-10μmVariable	16(minimum)	1	£50
S411	Interdigitated	26.6mm	5μm	20	1	£83

 

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UserManual

Specifications

Substrate/Gate	Silicon(p-doped)
Gatedielectric	300nmthermallygrownsilicondioxide
Source-Drainelectrodes	Platinum(100nm)/Titaniumadhesionlayer(5nm)
Depostionmethod	Plasmasputtering
Patterningmethod	Photolithography

 

Applications

OssilaHighDensitySubstratesfeatureupto20OFETswhichcanbenefityourresearchinanumberofways.Firstly,productioncostisreducedasaresultofahighervolumeofOFETspersubstratecomparedtothelowdensityequivalents.ThiscanhelptostretchyourbudgettoallowyoutoproduceandtestlargernumbersofOFETs.

Secondly,producingOFETsisafarfasterandlesslaboriousprocess.Fabricationtimeisreducedbyupto50%whenusingprefabricatedhighdensityOFETs,freeingupmoretimetotestthedevices.Asaresultofthis,greatervolumesofstatisticscanbeproducedwhichinturncanprovidemorerobustandreliableresearch.

FurThermore,OFETvariABIlityisreducedsincealargernumberofOFETsareproducedwitheachfabrication.AtOssilawehaveoptimisedthefabricationprocessinordertoproduceconsistentlyhighqualitysubstrates.Inthisrespect,usingourprefabricatedsubstratesratherthanfabricatingyourowncanhelpyoutogathermorereliabledatatobenefityourresearchproject.

Prefabricatedhighdensitysubstratesareidealformobilitytestingastheyenableswift,efficienttestingofhighvolumesofOFETs.TheOssilahigh-densityOFETtestboardhasbeendesignedforthispurpose. 

RatherthanusingamechanicalprobestationtotestOFETs,whichisadelicateandtime-consumingprocess,thehighdensitytestboardallowstestingofmultipleOFETsatonetime;simplydropthesubstrateintothetestslot,securethepush-fitlidandconnecttheboardviaitsBNCconnectorstoanarrayoftestequipment.

Theboardhasbeenintelligentlydesignedtoreduceexternalnoise,leakagecurrentandstraycapacitanceinordertoprovidereliableandpreciselow-currenttesting.

 

 

Specifications

Wefabricateourplatinumtestchipsfromp-dopedsiliconsubstrates.Aninsulating300nmsiliconoxidegatedielectricisfirstgrownonbothsidesofthesilicon.Thesourceanddraincontactsconsistofa5nmtitaniumadhesionlayer below 100 nmofplatinum.Aplatinumgatecontactisalsodepositedalongoneedgeofeachsubstrate.

Itisessentialthatthereisanelectricalconnectionbetweenthegatecontactandthep-dopedsilicononthesubstratesides.Whenthesubstratesarediced,aweakelectricalconnectionisformed,howeverthiscanbeeasilyremovedwhencleaningthesubstrate.Werecommendapplyingsilver(conductive)paintalongandaroundthegatecontactedgesothatamorerobustconnectionismade withthesubstrateedge.

 

Forindividualdetailsanddimensiondrawingsofeachsubstratetypesee below.

 

Linearvariablechannellengthsubstrates(S403&S404)

Geometry	Linear
Arrangement(S403)	20electrodepairs,5channelwidths
Arrangement(S404)	16electrodepairsminimum,4channelwidthsminimum*
Channelwidth	1mm
Channellengths	2(S403A1only),4,6,8,and10µm

*PleasenotethatthefabricationandlayoutofS403andS404isidentical,howeveroneormoreofthe2 µmchannels isnotfullyresolvedontheS404substrates.Allfour 2 µmchannelsarepresentontheS403substrates.

 

  

Interdigitated22.6mmx5µm constantchannellengthsubstrate(S411)

Geometry	Interdigitated
Arrangement	20identicalOFETs
Channelwidth	22.6mm
Channellength	5µm

 

Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,Ossilaassumenoliabilityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.

 

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